Threading Dislocations in InGaAs CaP Layers with InGaAs Graded Layers Grown on Si Substrates
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概要
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We investigated InGaAs layers with InGaAs graded layers on GaAs layers that had been grown on Si substrates using metalorganic vapor phase epitaxy. Cross-sectional transmission electron microscopy revealed that dislocations propagating from the GaAs layer were bent in the graded layer, thereby reducing the density of threading dislocations (TDs) in the InGaAs layer. Thermal cyclic annealing (TCA) was performed for GaAs layers. The TD density in the InGaAs layer decreased with decreasing TD density in the GaAs layer. The combination of an InGaAs graded layer with TCA of the GaAs layer was effective for reducing the TD density of the InGaAs cap layer. The respective TD densities of In0.095Ga0.905As and In0.22Ga0.78As layers with InGaAs graded layers were $1.3\times 10^{6}$ and $4.4\times 10^{6}$ cm-2 when TCA was performed four times at 850 °C for GaAs layers.
- 2010-10-25
著者
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Kobayashi Kazunobu
Department Of Aquatic Biosciences Tokyo University Of Fisheries
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Takano Yasushi
Department Of Agricultural-environmental Biology Graduate School Of Agriculture And Life Sciences Th
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Fuke Shunro
Department Of Electrical & Electronic Engineering Shizuoka University
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Fuke Shunro
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Uranishi Taiju
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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