Metalorganic Vapor Phase Epitaxy of InAs Layers on GaAs Substrates Using Low-Temperature Growth of InGaAs Graded Buffer Layers
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概要
- 論文の詳細を見る
InAs layers were grown on GaAs substrates by metalorganic vapor phase epitaxy using InGaAs graded buffer layers and two-step growth. Layer quality was investigated by transmission electron microscopy. The threading dislocation density in InAs grown with the graded buffer layer was determined to be $1.6 \times 10^{7}$ cm-2. That value was one order of magnitude lower than that of InAs layers grown by two-step growth. Graded buffer layer growth is more effective for InAs layers on GaAs substrates with low threading dislocation density than two-step growth.
- Japan Society of Applied Physicsの論文
- 2004-07-15
著者
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Takano Yasushi
Department Of Agricultural-environmental Biology Graduate School Of Agriculture And Life Sciences Th
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Fuke Shunro
Department Of Electrical & Electronic Engineering Shizuoka University
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UMEZAWA Masayoshi
Department of Electrical and Electronic Engineering, Shizuoka University
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Shirakata Sho
Faculty Of Engineering Ehime University
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Takano Yasushi
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan
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Fuke Shunro
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan
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Shirakata Sho
Faculty of Engineering, Ehime University, 3 Bunkyo-cho Matsuyama, Ehime 790-8577, Japan
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Umezawa Masayoshi
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan
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