Electroreflectance Studies in CuGaS2
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概要
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Room temperature electroreflectance (ER) measurements have been performed near the fundamental absorption edge of CuGaS2 single crystals grown by both iodine-transport and melt-growth methods. Transition energies and broadness of the ER spectra are examined and the results are discussed in terms of photoluminescence properties. The band gap energy obtained from the ER spectrum is 2.492 eV at 290 K, and the value is larger than the widely used band gap energy of 2.43 eV determined by the previous ER studies.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-09-20
著者
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Shirakata Sho
Faculty Of Engineering Ehime University
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Murakami Kazuo
Faculty Of Engineering Ehime University
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ISOMURA Shigehiro
Faculty of Engineering , Ehime University
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Isomura Shigehiro
Faculty of Engineering, Ehime University, Bunkyo-cho, Matsuyama, Ehime 790
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