Control of Grain in Cu(In,Ga)Se2 Thin Films Prepared by Selenization Method Using Diethylselenide
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概要
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The relationship between the selenization condition and the grain structure has been studied. A single-phase chalcopyrite Cu(In,Ga)Se2 thin film with densely-packed grains and large grains have been prepared by the two-step selenization of the In/Cu--Ga bilayer precursor using diethylselenide (DESe). The formation of the In--Se compound in the early stage of the first-step selenization (T=350{\mbox{--}}450 °C) has been found to be important. The succeeding second-step selenization at high temperature of 540 °C led to the well developed (112) grain formation. The relationship between the selenization condition and the CIGS film structure is discussed with relation to the selenization mechanism.
- 2012-10-25
著者
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Shirakata Sho
Faculty Of Engineering Ehime University
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Uchikoshi Masaki
Faculty of Engineering, Ehime University, Matsuyama 790-8577, Japan
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