Preparation of CuGaSe_2 Heteroepitaxial Layers by Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
The growth of CuGaSe_2 films on a GaAs(100) substrate using cyclopentadienylcoppertriethylphosphine (CpCuTEP) as a Cu source in metalorganic molecular beam epitaxy (MOMBE) has been studied. Epitaxial CuGaSe_2 films have been grown at 500℃ with the c-axis normal to the substrate plane. Films were characterized by scanning electron microscopy, X-ray diffraction, photoluminescence and photoreflectance techniques.
- 社団法人応用物理学会の論文
- 1994-05-15
著者
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Morita Kazuo
Faculty Of Agriculture Kagoshima University
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ISOMURA Shigehiro
Faculty of Engineering Ehime University
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Shirakata Sho
Faculty Of Engineering Ehime University
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Morita Kazuo
Faculty Of Engineering Ehime University
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ISOMURA Shigehiro
Faculty of Engineering , Ehime University
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