Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
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概要
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Raman studies were performed on GaN0.025As0.975 and Ga0.94In0.06N0.025As0.975 epilayers grown on (100) GaAs. N alloying enhanced the forbidden TO phonon, while In alloying had a negligible effect on it. The forbidden TO phonon had an $A_{1}$ symmetry, in contrast to that of Ga0.969In0.031As having a $T_{2}$ symmetry. In GaInNAs, thermal annealing led to the splitting of a N-related local vibrational mode (LVM) into a doublet (472 and 490 cm-1), while no change was observed in GaNAs. LVM is discussed in terms of In–N bond formation.
- 2005-06-15
著者
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Kondow Masahiko
Central Research Laboratory Hitachi Ltd.
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Shirakata Sho
Faculty Of Engineering Ehime University
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Kitatani Takeshi
Central Research Laboratory Hitachi Ltd.
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Kitatani Takeshi
Central Research Laboratory, Hitachi, Ltd, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Kondow Masahiko
Central Research Laboratory, Hitachi, Ltd, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Shirakata Sho
Faculty of Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama 790-8577, Japan
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