Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing
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概要
- 論文の詳細を見る
The quality of a GaInNAs single-quantum-well heterostructure crystal for laser diodes grown by molecular beam epitaxy was estimated using amplified spontaneous emission (ASE) measurement. The effects of rapid thermal annealing (RTA) were also estimated. The ASE intensity was four times higher with RTA, which is consistent with the decrease in the threshold current of the laser diode. The slope of the ASE versus injection current density showed that a 40% non-radiative recombination remained even after RTA. Thus, non-radiative recombination is still a major problem in improving GaInNAs laser diodes.
- Japan Society of Applied Physicsの論文
- 2003-08-15
著者
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Tsuji Shinji
Central Research Laboratory Hitachi Ltd.
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Kondow Masahiko
Central Research Laboratory Hitachi Ltd.
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Kudo Makoto
Central Research Lab. Hitachi Ltd.
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Kitatani Takeshi
Central Research Laboratory Hitachi Ltd.
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Aoki Masahiro
Central Research Laboratory Hitachi Ltd.
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Kitatani Takeshi
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Nakatsuka Shin'ichi
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Kondow Masahiko
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Tsuji Shinji
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Kudo Makoto
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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