Green-to-Yellow Continuous-Wave Operation of BeZnCdSe Quantum-Well Laser Diodes at Room Temperature
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概要
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We have grown laser diode structures using highly strained BeZnCdSe quantum wells by molecular beam epitaxy and successfully obtained continuous-wave lasing in the green-to-yellow spectral region (543--570 nm) at room temperature. The green-to-yellow lasing color was tuned by simply varying the Cd content of the quaternary BeZnCdSe quantum well. The threshold current densities of 20-μm-wide lasers were found to be sufficiently low (less than 0.85 kA/cm2). This result demonstrates that BeZnCdSe is a promising material for use as the active layer in high-performance green-to-yellow laser diodes.
- 2011-08-25
著者
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KASAI Jun-ichi
National Institute of Advanced Industrial Science and Technology (AIST)
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AKIMOTO Ryouichi
National Institute of Advanced Industrial Science and Technology (AIST)
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HASAMA Toshifumi
National Institute of Advanced Industrial Science and Technology (AIST)
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ISHIKAWA Hiroshi
National Institute of Advanced Industrial Science and Technology (AIST)
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Tsuji Shinji
Central Research Laboratory Hitachi Ltd.
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Tanaka Shigehisa
Central Research Laboratory Hitachi Limited
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Fujisaki Sumiko
Central Research Laboratory Hitachi Ltd.
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Tanaka Shigehisa
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Fujisaki Sumiko
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Tsuji Shinji
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Kasai Jun-ichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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