Cross Phase Modulation Efficiency Enhancement in In_<0.8>Ga_<0.2>As/Al_<0.5>Ga_<0.5>As/AlAs_<0.56>Sb_<0.44> Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-04-25
著者
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ISHIKAWA Hiroshi
National Institute of Advanced Industrial Science and Technology (AIST)
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Cong Guangwei
National Institute Of Advanced Industrial Science And Technology (aist)
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AKIMOTO Ryoichi
National Institute of Advanced Industrial Science and Technology (AIST), Photonics Research Institut
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Akimoto Ryoichi
National Institute Of Advanced Industrial Science And Technology (aist)
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GOZU Shin-ichiro
National Institute of Advanced Industrial Science and Technology (AIST)
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MOZUME Teruo
National Institute of Advanced Industrial Science and Technology (AIST)
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AKITA Kazumichi
National Institute of Advanced Industrial Science and Technology (AIST)
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Gozu Shinichirou
National Institute Of Advanced Industrial Science And Technology (aist)
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- Cross Phase Modulation Efficiency Enhancement in In_Ga_As/Al_Ga_As/AlAs_Sb_ Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength
- All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches Based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells
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- Ultrafast All-Optical Refractive Index Modulation in Intersubband Transition Switch Using InGaAs/AlAs/AlAsSb Quantum Well
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- Simulation of Cross Phase Modulation in Intersubband Transition of InGaAs/AlAs/AlAsSb Coupled Quantum Wells Based on Vector Signal Analysis of Electrical Signals
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