Observation of Spin Relaxation in InGaAs/AlAsSb Quantum Wells
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概要
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We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells using time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.46 μm electron-heavy hole excitons at room temperature is obtained to be 27–54 ps for an excitation power of 20–100 mW. The carrier density dependence of the exciton spin relaxation time was clearly observed, suggesting that the spin relaxation mechanism is strongly related to the Bir–Aronov–Pikus process at room temperature.
- 2010-04-25
著者
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GOZU Shin-ichiro
National Institute of Advanced Industrial Science and Technology (AIST)
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MOZUME Teruo
National Institute of Advanced Industrial Science and Technology (AIST)
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Izumi Sotaro
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Yu Saeki
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Takao Nukui
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Sotaro Izumi
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Atsushi Tackeuchi
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
関連論文
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- Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates
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- Picosecond Carrier Spin Relaxation in In₀.₈Ga₀.₂As/AlAs/AlAs₀.₅₆Sb₀.₄₄ Coupled Double Quantum Wells (Special Issue : Solid State Devices and Materials)