Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates
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概要
- 論文の詳細を見る
Time-resolved photoluminescence measurement was performed on one-dimensional GaN nanorods with $c$-axis-oriented single-crystalline wurtzite structures. The GaN nanorods were grown on Si(111) substrates by an improved hydride vapor phase epitaxy without a catalyst. Fast carrier recombinations of less than 10 ps were observed. The short recombination times of the GaN nanorods with few defects show the presence of nonradiative fast recombinations at the surface and interface.
- 2010-07-25
著者
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Tackeuchi Atsushi
Department Of Applied Physics Waseda University
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Kim Tae
Division Of Cardiology Severance Cardiovascular Hospital Yonsei University College Of Medicine
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Kang Tae
Quantum Functional Semiconductor Research Center Dongguk University
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Kwon Young
Quantum Functional Semiconductor Research Center Dongguk University
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Fujita Taisuke
Department Of Global Studies Sophia University
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Yoo Chan
Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Republic of Korea
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Yoo Chan
Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea
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Kang Tae
Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea
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Nukui Takao
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Nakazato Yoshiaki
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Saeki Yu
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Izumi Sotaro
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Kwon Young
Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea
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Kim Tae
Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Republic of Korea
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Fujita Taisuke
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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