Spin Relaxation in InAs Columnar Quantum Dots
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概要
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We have investigated carrier spin dynamics in InAs columnar quantum dots (CQDs) by time-resolved photoluminescence (PL) measurement. The CQDs were formed by depositing a 1.8 monolayer InAs seed dot layer and a short-period GaAs/InAs superlattice (SL). The spin relaxation time was found to be prolonged from 1.6 to 5.3 ns by increasing the number of SL periods from 3 to 35. The PL decay time also increased from 0.93 to 1.9 ns, indicating a decrease in the spatial overlap of electron and hole wave functions. The changes in both the spin relaxation time and the PL decay time suggest that the Bir–Aronov–Pikus process is the main spin relaxation mechanism.
- 2009-04-25
著者
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Tackeuchi Atsushi
Department Of Applied Physics Waseda University
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Nosho Hidetaka
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Lu Shulong
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125, China
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Umi Takehiko
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Li Lianhe
Ecole Polytechnique Federale de Lausanne, Institute of Photonics and Quantum Electronics, Station 3, CH-1015 Lausanne, Switzerland
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Fiore Andrea
COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
関連論文
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- Electron Spin Relaxation Dynamics in InGaAs/InP Multiple-Quantum Wells
- Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates
- Spin Relaxation in InAs Columnar Quantum Dots
- Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells
- Transition from Excitonic Tunneling to Free Carrier Tunneling in GaAs/AlGaAs Double Quantum Wells
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- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
- Picosecond Carrier Spin Relaxation in In₀.₈Ga₀.₂As/AlAs/AlAs₀.₅₆Sb₀.₄₄ Coupled Double Quantum Wells (Special Issue : Solid State Devices and Materials)