Picosecond Carrier Spin Relaxation in In

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概要

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• The carrier spin relaxation of In<inf>0.8</inf>Ga<inf>0.2</inf>As/AlAs/AlAs<inf>0.56</inf>Sb<inf>0.44</inf>coupled double quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed fast spin relaxation time of 9 ps at room temperature indicates high potential for applications to high-speed optical devices. A negative temperature dependence of spin relaxation time is observed between 100 K and room temperature. The spin relaxation is found to be governed by the Bir--Aronov--Pikus process between 10 and 100 K and by the D'yakonov--Perel' and Elliott--Yafet processes between 100 K and room temperature.

• 2013-04-25

著者

• Tackeuchi Atsushi

  Department Of Applied Physics Waseda University

• GOZU Shin-ichiro

  National Institute of Advanced Industrial Science and Technology (AIST)

• MOZUME Teruo

  National Institute of Advanced Industrial Science and Technology (AIST)

• Uemura Mitsunori

  Department of Robotics Ritsumeikan University

• Yamaguchi Ryo

  Department of Applied Life Science, Faculty of Applied Biological Sciences, Gifu University

• Gozu Shin-ichiro

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Oyanagi Yoshitsugu

  Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan

• Yamaguchi Ryo

  Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan

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