High-Quality GaSb/AlGaSb Quantum Well Grown on Si Substrate
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概要
- 論文の詳細を見る
We fabricate a GaSb/AlGaSb multi-quantum well (MQW) on a Si substrate. A high-quality GaSb/AlGaSb MQW sample can be grown on a Si substrate using an AlSb initiation layer. We can obtain a strong emission of 1.55 μm at room temperature from the sample, which has an 8 nm well width. Furthermore, we can control the emission wavelength by simply changing well width. The emission energy shows a good agreement with the theoretical curve. This indicates that the controllability of this material system is very high even when grown on a Si substrate.
- Japan Society of Applied Physicsの論文
- 2005-01-10
著者
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GOZU Shin-ichiro
National Institute of Advanced Industrial Science and Technology (AIST)
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OHTANI Naoki
National Institute of 'Information and Communications Technology
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Akahane Kouichi
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Yamamoto Naokatsu
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Gozu Shin-ichiro
National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Ohtani Naoki
National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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