Gain Measurement of Highly Stacked InGaAs Quantum Dot Laser with Hakki--Paoli Method

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概要

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• A 147-μm-long cavity laser diode with 19 InGaAs quantum dot layers was fabricated by the ultrahigh-rate molecular beam epitaxial growth technique, and its gain properties were investigated using the Hakki--Paoli method below the threshold current (I_{\text{th}}) of 111.5 mA. At an injection current of 100.3 mA (0.9I_{\text{th}}), the positive net modal gain was in the range between 1005 and 1043 nm, corresponding to a photon energy of 45 meV. The maximum net modal gain and maximum modal gain were 46.5 and 60.5 cm^-1, respectively. A differential net modal gain of as high as 3.8 cm^-1/mA was observed at 0.77 times the threshold current. No gain saturation appeared below the threshold current, and injection currents higher than 78.4 mA ({\approx}0.7I_{\text{th}}) were required to obtain a net modal gain.

• 2013-04-25

著者

• Akahane Kouichi

  National Inst. Information And Communications Technol. (nict) Tokyo Jpn

• Yamamoto Naokatsu

  National Inst. Information And Communications Technol. (nict) Tokyo Jpn

• Yamamoto Naokatsu

  National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795, Japan

• Akahane Kouichi

  National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795, Japan

• Tanoue Fumihiko

  Graduate School of System Design, Tokyo Metropolitan University, Hino, Tokyo 191-0065, Japan

• Sugawara Hiroharu

  Graduate School of System Design, Tokyo Metropolitan University, Hino, Tokyo 191-0065, Japan

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