Energy Transfer in Multi-Stacked InAs Quantum Dots
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概要
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We fabricated a modulated stacked quantum dot (QD) structure to investigate energy transfer among QDs using a strain compensation technique that allowed us to fabricate a vertically aligned, highly stacked structure without any degradation in crystal quality. Enhanced photoluminescence (PL) intensity for the ground state of large QDs was clearly observed in a sample where the ground state of small QDs was resonant to the first excited state of large QDs, indicating energy transfer from small QDs to large QDs. Long-range energy transfer reached approximately 200 nm and can be considered from the measurement of N dependence of PL intensity.
- 2011-04-25
著者
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NARUSE Makoto
National Institute of Information and Communications Technology
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Yatsui Takashi
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Kawazoe Tadashi
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Akahane Kouichi
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Yamamoto Naokatsu
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Ohtsu Motoichi
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Ohtsu Motoichi
Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Yamamoto Naokatsu
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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