Interface states of AlSb/InAs heterointerface with AlAs-like interface
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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YAMAMOTO Naokatsu
Basic and Advanced Research Department, National Institute of Information and Communications Technol
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OHTANI Naoki
Doshisha University
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Ueta Akio
National Institute Of Information And Communications Technology Advanced Communications Technology G
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AKAHANE Kouichi
National Institute of Information and Communications Technology
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GOZU Shin-ichiro
Basic and Advanced Research Department, National Institute of Information and Communications Technol
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AKAHANE Kouichi
Basic and Advanced Research Division, National Institute of Information and Communications Technolog
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UETA Akio
Basic and Advanced Research Division, National Institute of Information and Communications Technolog
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ANDO Taro
Central Research Laboratoly, Hamamatsu photonics K. K.
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Akahane Kouichi
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Gozu Sin-ichioro
National Institute Of Information And Communications Technology Advanced Communications Technology G
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Gozu Shin-ichiro
Basic And Advanced Research Department National Institute Of Information And Communications Technolo
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Ando Taro
Central Research Laboratoly Hamamatsu Photonics K. K.
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Yamamoto Naokatsu
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Yamamoto Naokatsu
Basic And Advanced Research Department National Institute Of Information And Communications Technolo
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- Analysis of Novel Alignment Method for Fabricating Three-Dimensional Photonic Crystal
- Interface states of AlSb/InAs heterointerface with AlAs-like interface
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- 10-GHz High-Repetition Optical Short Pulse Generation from Wavelength-Tunable Quantum Dot Optical Frequency Comb Laser
- A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique