1.55-μm-Waveband Emissions from Sb-Based Quantum-Dot Vertical-Cavity Surface-Emitting Laser Structures Fabricated on GaAs Substrate

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概要

• 論文の詳細を見る

• We have developed antimonide-based quantum-dot vertical-cavity surface-emitting laser (Sb-based QD-VCSEL) structures for operation in the 1.3 and 1.55 μm optical communication wavebands. They were fabricated on a (001)-oriented GaAs substrate and contain high-density InGaSb QDs as the active medium owing to the use of silicon atom irradiation. Testing demonstrated that they have optical-communication-waveband emission peaks at around 1.55 μm in cw wave operation at room temperature under conditions of optical pumping and current injection. Additionally, it was found that these Sb-based QD-VCSELs have threshold characteristics in the emission intensities vs both optical-pumping power and current.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• OHTANI Naoki

  Doshisha University

• Ueta Akio

  National Institute Of Information And Communications Technology Advanced Communications Technology G

• Akahane Kouichi

  National Inst. Information And Communications Technol. (nict) Tokyo Jpn

• Yamamoto Naokatsu

  National Inst. Information And Communications Technol. (nict) Tokyo Jpn

• Akahane Kouichi

  National Institute of Information and Communications Technology (NICT), Basic and Advanced Research Department, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

• Gozu Shin-ichirou

  National Institute of Information and Communications Technology (NICT), Basic and Advanced Research Department, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

• Ueta Akio

  National Institute of Information and Communications Technology (NICT), Basic and Advanced Research Department, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

• Yamamoto Naokatsu

  National Institute of Information and Communications Technology (NICT), Basic and Advanced Research Department, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

関連論文

• Optical Rabi Oscillations in a Quantum Dot Ensemble
• Circular Polarization Control in Silicon-Based All-Optical Switch
• Ultrahigh Relative Refractive Index Contrast GaAs Nanowire Waveguides
• Energy Transfer in Multi-Stacked InAs Quantum Dots
• Developing a Half-Cladding Semiconductor Photonic Device Structure for Surface Transmission of Light Waves
• Quantum Dot Optical Frequency Comb Laser with Mode-Selection Technique for 1-μm Waveband Photonic Transport System
• Novel Functionality and Material for Si-Photonics: Two-Photon Absorption Switching and Antimonide Hetero-Genius Epitaxy(Evolution of Microwave and Millimeter-Wave Photonics Technology)
• Fabrication of Sb-based QDs for long-wavelength VCSELs
• Interface states of AlSb/InAs heterointerface with AlAs-like interface
• Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy
• 1.55-μm-waveband lasing operation of Sb-based quantum-dot vertical-cavity surface-emitting lasers (Sb-based QD-VCSELs) fabricated on GaAs substrate
• Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
• Scale-dependent Optical Near-fields in InAs Quantum Dots and Their Application to Non-pixelated Memory Retrieval
• Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources (Special Issue : Solid State Devices and Materials (1))
• Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm
• Circular Polarization Control in Silicon-Based All-Optical Switch
• Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources
• Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band
• Enhancement of Optical Anisotropy by Interconnection Effect along Growth Direction in Multistacked Quantum Dots
• Negligible Pure Dephasing in InAs Self-Assembled Quantum Dots
• 1.55-μm-Waveband Emissions from Sb-Based Quantum-Dot Vertical-Cavity Surface-Emitting Laser Structures Fabricated on GaAs Substrate
• Growth of InGaSb Quantum Dot Structures on GaAs and Silicon Substrates
• Interface States of AlSb/InAs Heterointerface with AlAs-Like Interface
• Optical Cavity Properties of Metal Mirror Microcavities with InAsSb Quantum Dots
• Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy
• High-Quality GaSb/AlGaSb Quantum Well Grown on Si Substrate
• Gain Measurement of Highly Stacked InGaAs Quantum Dot Laser with Hakki--Paoli Method
• Fabrication of Metal Embedded Nano-Cones for Single Quantum Dot Emission
• 10-GHz High-Repetition Optical Short Pulse Generation from Wavelength-Tunable Quantum Dot Optical Frequency Comb Laser
• Publisher's Note: "Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm"
• Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
• 10-GHz High-Repetition Optical Short Pulse Generation from Wavelength-Tunable Quantum Dot Optical Frequency Comb Laser
• A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

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