Growth of InGaSb Quantum Dot Structures on GaAs and Silicon Substrates

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概要

• 論文の詳細を見る

• We present a growth technique for InGaSb quantum dots (QDs) as Sb-based QD structures on GaAs and silicon substrates by molecular beam epitaxy. We successfully fabricated high-quality and high-density (${>}10^{10}$/cm2) Sb-based QD structures on both substrates by optimizing growth conditions. Additionally, using the Sb-based QDs embedded in a GaAs matrix as an active medium, we demonstrated optical emissions at a wavelength of 1.55-μm from the Sb-based QDs in an optical microcavity structure fabricated on the GaAs substrate. We also discuss the growth of the Sb-based QDs on a silicon wafer that may become useful materials for silicon photonics technology.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• OHTANI Naoki

  Doshisha University

• Tsuchiya Masahiro

  Advanced Communications Technology Group, National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

• Akahane Kouichi

  Advanced Communications Technology Group, National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

• Gozu Shin-ichirou

  Advanced Communications Technology Group, National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

• Yamamoto Naokatsu

  Advanced Communications Technology Group, National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

• Ueta Akio

  Advanced Communications Technology Group, National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

関連論文

• Circular Polarization Control in Silicon-Based All-Optical Switch
• Fabrication of Sb-based QDs for long-wavelength VCSELs
• Interface states of AlSb/InAs heterointerface with AlAs-like interface
• Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy
• 1.55-μm-waveband lasing operation of Sb-based quantum-dot vertical-cavity surface-emitting lasers (Sb-based QD-VCSELs) fabricated on GaAs substrate
• Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
• Circular Polarization Control in Silicon-Based All-Optical Switch
• 1.55-μm-Waveband Emissions from Sb-Based Quantum-Dot Vertical-Cavity Surface-Emitting Laser Structures Fabricated on GaAs Substrate
• Growth of InGaSb Quantum Dot Structures on GaAs and Silicon Substrates
• Interface States of AlSb/InAs Heterointerface with AlAs-Like Interface
• Optical Cavity Properties of Metal Mirror Microcavities with InAsSb Quantum Dots

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