Negligible Pure Dephasing in InAs Self-Assembled Quantum Dots
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概要
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We measured the dephasing time and radiative lifetime of excitons in InAs quantum dots fabricated using the strain compensation technique. The dephasing time at 3 K was as long as 2.86 ns using transient four-wave mixing measurements at an excitation wavelength of 1.468 μm. This ultralong dephasing time was due to the significant suppression of pure dephasing.
- 2007-09-30
著者
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Ema Kazuhiro
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Sasaki Masahide
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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ISHI-HAYASE Junko
National Institute of Information and Communications Technology
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Akahane Kouichi
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Kujiraoka Mamiko
National Institute Of Information And Communications Technology (nict)
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Yamamoto Naokatsu
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Ishi-Hayase Junko
National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Ema Kazuhiro
Department of Physics, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
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Kujiraoka Mamiko
National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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