Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources (Special Issue : Solid State Devices and Materials (1))
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
関連論文
- Optical Rabi Oscillations in a Quantum Dot Ensemble
- Ultrahigh Relative Refractive Index Contrast GaAs Nanowire Waveguides
- Energy Transfer in Multi-Stacked InAs Quantum Dots
- Developing a Half-Cladding Semiconductor Photonic Device Structure for Surface Transmission of Light Waves
- Quantum Dot Optical Frequency Comb Laser with Mode-Selection Technique for 1-μm Waveband Photonic Transport System
- Novel Functionality and Material for Si-Photonics: Two-Photon Absorption Switching and Antimonide Hetero-Genius Epitaxy(Evolution of Microwave and Millimeter-Wave Photonics Technology)
- Fabrication of Sb-based QDs for long-wavelength VCSELs
- Interface states of AlSb/InAs heterointerface with AlAs-like interface
- Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy
- 1.55-μm-waveband lasing operation of Sb-based quantum-dot vertical-cavity surface-emitting lasers (Sb-based QD-VCSELs) fabricated on GaAs substrate
- Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
- Scale-dependent Optical Near-fields in InAs Quantum Dots and Their Application to Non-pixelated Memory Retrieval
- Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources (Special Issue : Solid State Devices and Materials (1))
- Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm
- Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources
- Negligible Pure Dephasing in InAs Self-Assembled Quantum Dots
- 1.55-μm-Waveband Emissions from Sb-Based Quantum-Dot Vertical-Cavity Surface-Emitting Laser Structures Fabricated on GaAs Substrate
- Optical Cavity Properties of Metal Mirror Microcavities with InAsSb Quantum Dots
- Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy
- High-Quality GaSb/AlGaSb Quantum Well Grown on Si Substrate
- Gain Measurement of Highly Stacked InGaAs Quantum Dot Laser with Hakki--Paoli Method
- 10-GHz High-Repetition Optical Short Pulse Generation from Wavelength-Tunable Quantum Dot Optical Frequency Comb Laser
- Publisher's Note: "Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm"
- Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
- 10-GHz High-Repetition Optical Short Pulse Generation from Wavelength-Tunable Quantum Dot Optical Frequency Comb Laser