Developing a Half-Cladding Semiconductor Photonic Device Structure for Surface Transmission of Light Waves
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概要
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A control of the light-wave properties is critical issue in developing attractive photonic devices. In conventional photonic devices such as semiconductor waveguide light sources, complicated techniques were required to fabricate the high-aspect-ratio artificial periodic structures that help controlling the light-wave properties. This is because the conventional photonic devices are constructed with thick cladding layers for an optical confinement. In this paper, we propose and fabricate a half-cladding semiconductor light source as an attractive photonic device structure. We successfully demonstrated a light emission from the light source under current injection at room temperature. With a half-cladding structure, the total thickness between the device surface and the top of the active layer is on the sub-μm scale. Controlling the light-wave properties should therefore be possible with artificial surface microstructures fabricated by a low aspect ratio process sequence.
- 2011-04-25
著者
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TAKAI Hiroshi
Tokyo Denki University
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Sotobayashi Hideyuki
College Of Science And Engineering Aoyama Gakuin University
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Akahane Kouichi
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Yamamoto Naokatsu
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Kawanishi Tetsuya
National Inst. Of Information And Technol. (nict) Tokyo Jpn
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Kawanishi Tetsuya
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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Fujioka Hiroki
Tokyo Denki University, Chiyoda, Tokyo 101-8457, Japan
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Murakami Daisuke
Tokyo Denki University, Chiyoda, Tokyo 101-8457, Japan
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Akahane Kouichi
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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