Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm
スポンサーリンク
概要
- 論文の詳細を見る
Erbium-doped silicon suboxide is formed by vacuum deposition of erbium and silicon monoxide and subsequent annealing. We show that the samples exhibit high photoluminescence intensity at 1.5 μm at room temperature and estimate the optical bandgap of the samples to be 1.7 to 2.4 eV from the absorption coefficients. To investigate the oxidation state of the samples, we measure the atomic concentration ratio of O/Si to be 1.2 to 1.3 by X-ray photoelectron spectroscopy. Furthermore, we confirm that the phase separation of homogeneous silicon suboxide into Si- and SiO2-rich portions occurs at high anneal temperatures. Finally, we discuss the mechanisms of the anneal temperature dependences of photoluminescence intensity and optical bandgap.
- 2008-12-25
著者
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Yoshida Takeshi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kishi Masato
Department Of Applied Physics University Of Tokyo
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Tsuchiya Masahiro
National Defense Academy
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Yamamoto Naokatsu
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Naka Yoshihiro
Graduate School of Science and Technology, Kumamoto University, Kumamoto 860-8555, Japan
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Miyawaki Daisuke
Graduate School of Science and Technology, Kumamoto University, Kumamoto 860-8555, Japan
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Minami Takashi
Graduate School of Science and Technology, Kumamoto University, Kumamoto 860-8555, Japan
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Ito Kosaburo
Graduate School of Science and Technology, Kumamoto University, Kumamoto 860-8555, Japan
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Nakamura Yusui
Graduate School of Science and Technology, Kumamoto University, Kumamoto 860-8555, Japan
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Nakamura Yusui
Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan
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Tsuchiya Masahiro
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8794, Japan
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Kishi Masato
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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