In situ Metal Mask for Selective Area Growth of Thin Epitaxial Layers

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概要

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• We have developed an in situ metal mask that enables the selective formation of molecular beam epitaxially grown layers in narrow regions and the subsequent formation of marker layers. It can be fitted to a sample holder and removed in an ultrahigh-vacuum environment; therefore, device structures can be fabricated without exposing the sample surfaces to air. To explore the effectiveness of the mask, we used it to grow quantum dot (QD) layers in narrow regions and verified the perfect selectivity of the QD growth. The grown QDs exhibited high optical quality with a photoluminescence peak at approximately 1.29 μm and a linewidth of 30 meV at room temperature. Furthermore, on the selectively grown layers, we have fabricated waveguide structures that showed a high transmittance near 1.3 μm wavelength with a dip due to the absorption by the embedded QDs. The developed mask can be used for the integration of microstructures into optoelectronic functional devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• OHKOUCHI Shunsuke

  National Institute of Advanced Industrial Science and Technology (AIST)

• IKEDA Naoki

  National Institute for Material Science (NIMS)

• Takata Yoshiaki

  Center For Tsukuba Advanced Research Alliance (tara) University Of Tsukuba

• Nakamura Yusui

  Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan

• Ikeda Naoki

  National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Ozaki Nobuhiko

  Center for TARA, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan

• Kitagawa Yoshinori

  Center for TARA, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan

• Asakawa Kiyoshi

  Center for TARA, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan

• Sugimoto Yoshimasa

  Center for TARA, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan

• Takata Yoshiaki

  Center for TARA, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan

関連論文

• In situ Metal Mask for Selective Area Growth of Thin Epitaxial Layers
• Optical-Nonlinearity-Induced Phase Shift via Selective Area Grown InAs-QDs in a Photonic Crystal Waveguide
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• Optical-Nonlinearity-Induced Phase Shift via Selective-Area Grown InAs Quantum Dots in a Photonic Crystal Waveguide
• Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm
• Color Filter Based on Surface Plasmon Resonance Utilizing Sub-Micron Periodic Hole Array in Aluminum Thin Film
• Nanophotonics Based on Semiconductor-Photonic Crystal/Quantum Dot and Metal-/Semiconductor-Plasmonics
• Monolithic Fabrication of Two-Color InAs Quantum Dots for Integrated Optical Devices by Using a Rotational Metal Mask
• In situ Metal Mask for Selective Area Growth of Thin Epitaxial Layers
• Accumulative Damage of GaAs and InP Surfaces Induced by Multiple-Laser-Pulse Irradiation
• Publisher's Note: "Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm"

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