Development of K-Band Front-End Devices for Broadband wireless Communication Systems Using Millimeter-Wave Flip-Chip IC Technology(Special Issue on Microwave and Millimeter-Wave Module Technology)

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This paper describes new millimeter-wave IC's based on flip-chip bonding using micro bumps on a low cost silicon substrate, named millimeter-wave flip-chip IC's(MFIC's). They have significant advantages such as good performance, low cost and excellent flexibility in the active device selection which makes them superior to conventional monolithic microwave integrated circuits(MMIC's). In order to demonstrate these advantages, a K-band front-end block for a broadband wireless communication equipment was designed and fabricated. This front-end block consists of four MFIC chips:a low noise amplifier(LNA), a down converter and two medium power amplifiers. These chips are designed to satisfy stable operation conditions using a simplified model derived for micro bump bonding(MBB). In experimental measurements;the LNA using heterojunction field-effect transistors(HFET's)had an 18dB gain, the down converter using an HFET had a 9.5dB conversion loss, and two power amplifiers using heterojunction bipolar transistors(HBT's)had saturated powers of 13.0dBm and 11.7dBm, respectively. The performance for each of the developed IC's agreed with the designed values, and satisfied circuit requirements. These results show that the MFIC technique is a potential technology for manufacturing multifunctional millimeter-wave IC's.
社団法人電子情報通信学会の論文
1998-06-25