A PND (PMOS-NMOS-Depletion MOS) Type Single Poly Gate Non-Volatile Memory Cell Design with a Differential Cell Architecture in a Pure CMOS Logic Process for a System LSI(Semiconductor Materials and Devices)
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概要
- 論文の詳細を見る
A novel PND (P__-MOS-N__-MOS-D__-epletion MOS) technology for a single poly gate non-volatile memory cell design has been reported for the first time. This technology features memory cell design with a differential cell architecture which enables to provide the higher performance for the key specifications such as programming time, erasing time, and endurance characteristics. This memory cell consists of 3-Transistors, P__-MOS, N__-MOS, and D__-epletion MOS transistors (hereafter PND). The DMOS in this cell is used for the tunneling device in the erasing operation, while the NMOS and the PMOS are used for the tunneling device and the coupling capacitor in the programming operation, respectively. The proposed PND design can allow lower applied voltage of the erase-gate (EG) and control-gate (CG) in the erasing and the programming operations so that the endurance characteristics can be improved because the DMOS suppresses the potential of floating-gate (FG) and hence the effective potential difference between the EG and the FG can be increased in the erasing operation. Based on the measured data, it can be expected that the erasing speed of the PND cell can be 125-fold faster than that of our previously reported work (PN type). Therefore, high performance and high reliability CMOS non-volatile memory without any additional process can be realized using this proposed PND technology.
- 社団法人電子情報通信学会の論文
- 2007-05-01
著者
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Yamamoto Yasue
System Lsi Technology Development Center Corporate System Lsi Development Division Semiconductor Com
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Yamamoto Yasue
System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush
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SHIRAHAMA Masanori
System LSI Technology Development Center, Corporate System LSI Division, Semiconductor Company, Mats
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KAWASAKI Toshiaki
System LSI Technology Development Center, Corporate System LSI Division, Semiconductor Company, Mats
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NISHIHARA Ryuji
System LSI Technology Development Center, Corporate System LSI Division, Semiconductor Company, Mats
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SUMI Shinichi
System LSI Technology Development Center, Corporate System LSI Division, Semiconductor Company, Mats
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AGATA Yasuhiro
System LSI Technology Development Center, Corporate System LSI Division, Semiconductor Company, Mats
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KIKUKAWA Hirohito
System LSI Technology Development Center, Corporate System LSI Division, Semiconductor Company, Mats
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YAMAUCHI Hiroyuki
Faculty of Information Engineering, Fukuoka Institute of Technology
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Yamauchi Hiroyuki
Faculty Of Information Engineering Dept. Of Computer Science And Engineering Fukuoka Institute Of Te
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Takahashi Ken-ichi
Department Of Surgery Tohoku Rosai Hospital
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Takahashi Ken-ichi
Faculty Of Engineering And Resource Science Akita University:(present Office)nagano National College
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Yamauchi H
Faculty Of Information Engineering Fukuoka Institute Of Technology
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Kitayama Taku
Division Of Biological Regulation And Oncology Department Of Surgery Tohoku University Graduate Scho
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Agata Yasuhiro
System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush
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Kasuga T
Akita Univ. Akita‐shi Jpn
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Shirahama Masanori
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Shirahama Masanori
System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush
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Takahashi K
System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush
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Sumi Shinichi
System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush
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Nishihara Ryuji
System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush
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Kitayama Taku
Department Of Surgery Division Of Gastrointestinal And Colorectal Surgery Tohoku University Graduate
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Kikukawa Hirohito
System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush
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