Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-06-10
著者
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OHTANI Naoki
Doshisha University
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Ueta Akio
National Institute Of Information And Communications Technology Advanced Communications Technology G
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YAMAMOTO Naokatsu
National Institute of Information and Communications Technology
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AKAHANE Kouichi
National Institute of Information and Communications Technology
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GOZU Sin-ichioro
National Institute of 'Information and Communications Technology
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OHTANI Naoki
National Institute of 'Information and Communications Technology
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Akahane Kouichi
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Gozu Sin-ichioro
National Institute Of Information And Communications Technology Advanced Communications Technology G
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Yamamoto Naokatsu
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Ueta Akio
National Institute of Information and Communications Technology (NICT), Basic and Advanced Research Department, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
関連論文
- Optical Rabi Oscillations in a Quantum Dot Ensemble
- Circular Polarization Control in Silicon-Based All-Optical Switch
- Ultrahigh Relative Refractive Index Contrast GaAs Nanowire Waveguides
- Energy Transfer in Multi-Stacked InAs Quantum Dots
- Developing a Half-Cladding Semiconductor Photonic Device Structure for Surface Transmission of Light Waves
- Quantum Dot Optical Frequency Comb Laser with Mode-Selection Technique for 1-μm Waveband Photonic Transport System
- Novel Functionality and Material for Si-Photonics: Two-Photon Absorption Switching and Antimonide Hetero-Genius Epitaxy(Evolution of Microwave and Millimeter-Wave Photonics Technology)
- Fabrication of Sb-based QDs for long-wavelength VCSELs
- Interface states of AlSb/InAs heterointerface with AlAs-like interface
- Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy
- 1.55-μm-waveband lasing operation of Sb-based quantum-dot vertical-cavity surface-emitting lasers (Sb-based QD-VCSELs) fabricated on GaAs substrate
- Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
- Scale-dependent Optical Near-fields in InAs Quantum Dots and Their Application to Non-pixelated Memory Retrieval
- Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources (Special Issue : Solid State Devices and Materials (1))
- Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm
- Circular Polarization Control in Silicon-Based All-Optical Switch
- Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources
- Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band
- Enhancement of Optical Anisotropy by Interconnection Effect along Growth Direction in Multistacked Quantum Dots
- Negligible Pure Dephasing in InAs Self-Assembled Quantum Dots
- 1.55-μm-Waveband Emissions from Sb-Based Quantum-Dot Vertical-Cavity Surface-Emitting Laser Structures Fabricated on GaAs Substrate
- Growth of InGaSb Quantum Dot Structures on GaAs and Silicon Substrates
- Interface States of AlSb/InAs Heterointerface with AlAs-Like Interface
- Optical Cavity Properties of Metal Mirror Microcavities with InAsSb Quantum Dots
- Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy
- High-Quality GaSb/AlGaSb Quantum Well Grown on Si Substrate
- Gain Measurement of Highly Stacked InGaAs Quantum Dot Laser with Hakki--Paoli Method
- Fabrication of Metal Embedded Nano-Cones for Single Quantum Dot Emission
- 10-GHz High-Repetition Optical Short Pulse Generation from Wavelength-Tunable Quantum Dot Optical Frequency Comb Laser
- Publisher's Note: "Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm"
- Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
- 10-GHz High-Repetition Optical Short Pulse Generation from Wavelength-Tunable Quantum Dot Optical Frequency Comb Laser
- A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique