Interface States of AlSb/InAs Heterointerface with AlAs-Like Interface
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概要
- 論文の詳細を見る
We have studied the interface states (IFSs) of AlSb/InAs multiple quantum wells (MQWs) with an AlAs-like interface. The MQWs were grown by molecular beam epitaxy (MBE) using a proper shutter sequence at their interface to control the AlAs-like interface. The MQWs were evaluated by x-ray diffraction, photoluminescence, Hall and absorption measurements. These measurements revealed that IFSs at the AlAs-like interface originate from anticite As defects at the interface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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OHTANI Naoki
Doshisha University
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AKAHANE Kouichi
Basic and Advanced Research Division, National Institute of Information and Communications Technolog
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UETA Akio
Basic and Advanced Research Division, National Institute of Information and Communications Technolog
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Gozu Shin-ichiro
Basic And Advanced Research Department National Institute Of Information And Communications Technolo
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Ando Taro
Central Research Laboratoly Hamamatsu Photonics K. K.
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Yamamoto Naokatsu
Basic And Advanced Research Department National Institute Of Information And Communications Technolo
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Gozu Shin-ichiro
Basic and Advanced Research Division, National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Ueta Akio
Basic and Advanced Research Division, National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Yamamoto Naokatsu
Basic and Advanced Research Division, National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Ando Taro
Central Research Laboratory, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamamatsu, Shizuoka 434-8601, Japan
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