Fabrication of Sb-based QDs for long-wavelength VCSELs
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
-
Tsuchiya Masahiro
National Institute Of Information And Communications Technology
-
OHTANI Naoki
Doshisha University
-
Ueta Akio
National Institute Of Information And Communications Technology Advanced Communications Technology G
-
YAMAMOTO Naokatsu
National Institute of Information and Communications Technology
-
AKAHANE Kouichi
National Institute of Information and Communications Technology
-
GOZU Shin-ichirou
National Institute of Information and Communications Technology, Advanced Communications Technology
-
Akahane Kouichi
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
-
Gozu Sin-ichioro
National Institute Of Information And Communications Technology Advanced Communications Technology G
-
Tsuchiya Masahiro
National Defense Academy
-
Yamamoto Naokatsu
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
-
Gozu Shin-ichirou
National Institute of Information and Communications Technology (NICT), Basic and Advanced Research Department, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
-
Ueta Akio
National Institute of Information and Communications Technology (NICT), Basic and Advanced Research Department, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
関連論文
- Optical Rabi Oscillations in a Quantum Dot Ensemble
- Circular Polarization Control in Silicon-Based All-Optical Switch
- Ultrahigh Relative Refractive Index Contrast GaAs Nanowire Waveguides
- Ultrafast Response Induced by Interference Effects between Weakly Confined Exciton States(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Highly Efficient Third Harmonic Generation in a Periodically Poled MgO:LiNbO_3 Disk Resonator
- Phase Stability Measurement of an Optical Two-Tone Signal Applied to a Signal Reference Source for Millimeter and Sub-Millimeter Wave Interferometer
- Energy Transfer in Multi-Stacked InAs Quantum Dots
- Developing a Half-Cladding Semiconductor Photonic Device Structure for Surface Transmission of Light Waves
- Quantum Dot Optical Frequency Comb Laser with Mode-Selection Technique for 1-μm Waveband Photonic Transport System
- CS-5-5 Highly Pure Two-Tone Lightwave Generation using High Extinction-Ratio Optical Intensity Modulator and Delay Interferometer
- Novel Functionality and Material for Si-Photonics: Two-Photon Absorption Switching and Antimonide Hetero-Genius Epitaxy(Evolution of Microwave and Millimeter-Wave Photonics Technology)
- Fabrication of Sb-based QDs for long-wavelength VCSELs
- Lithium Nibate Disk Sensor Using Photonic Heterodyning
- Interface states of AlSb/InAs heterointerface with AlAs-like interface
- Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy
- 1.55-μm-waveband lasing operation of Sb-based quantum-dot vertical-cavity surface-emitting lasers (Sb-based QD-VCSELs) fabricated on GaAs substrate
- Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
- Scale-dependent Optical Near-fields in InAs Quantum Dots and Their Application to Non-pixelated Memory Retrieval
- A Thermolysis/Distillation Under an Extra Pressure to Liquid Fuels for a Polyethylene
- Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources (Special Issue : Solid State Devices and Materials (1))
- Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm
- Circular Polarization Control in Silicon-Based All-Optical Switch
- Characterization of Wavelength-Tunable Quantum Dot External Cavity Laser for 1.3-μm-Waveband Coherent Light Sources
- Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band
- Enhancement of Optical Anisotropy by Interconnection Effect along Growth Direction in Multistacked Quantum Dots
- Stimulated Brillouin Amplification in a Tellurite Fiber as a Potential System for Slow Light Generation
- Negligible Pure Dephasing in InAs Self-Assembled Quantum Dots
- Linear and Nonlinear Nanophotonic Devices Based on Silicon-on-Insulator Wire Waveguides
- 1.55-μm-Waveband Emissions from Sb-Based Quantum-Dot Vertical-Cavity Surface-Emitting Laser Structures Fabricated on GaAs Substrate
- Growth of InGaSb Quantum Dot Structures on GaAs and Silicon Substrates
- Interface States of AlSb/InAs Heterointerface with AlAs-Like Interface
- Optical Cavity Properties of Metal Mirror Microcavities with InAsSb Quantum Dots
- Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy
- High-Quality GaSb/AlGaSb Quantum Well Grown on Si Substrate
- Gain Measurement of Highly Stacked InGaAs Quantum Dot Laser with Hakki--Paoli Method
- Fabrication of Metal Embedded Nano-Cones for Single Quantum Dot Emission
- 10-GHz High-Repetition Optical Short Pulse Generation from Wavelength-Tunable Quantum Dot Optical Frequency Comb Laser
- Publisher's Note: "Optical Characterization and X-ray Photoelectron Spectroscopy of Erbium-Doped Silicon Suboxide Infrared Emitting at 1.5 μm"
- Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
- Experimental Visualizations and Wave Vector Characterizations of Bloch Functions in Microwave Metamaterial Structures
- 10-GHz High-Repetition Optical Short Pulse Generation from Wavelength-Tunable Quantum Dot Optical Frequency Comb Laser
- A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique