Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
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概要
- 論文の詳細を見る
InAsSb quantum dots (QDs) were studied by introducing periodic supply epitaxy. Photoluminescence spectra from InAsSb QDs showed strong emissions even at room temperature. The InAsSb QDs by periodic supply epitaxy allowed the control of emission wavelengths of optical fiber communication systems. The control of the density of InAsSb QDs in the range from $4.5 \times 10^{9}$ to $3.5 \times 10^{10}$ cm-2 without changing emission wavelengths was demonstrated. These results indicate that periodic supply epitaxy is a useful technique for various optical devices such as QD lasers and single photon emitters.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-05-10
著者
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GOZU Sin-ichioro
National Institute of 'Information and Communications Technology
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OHTANI Naoki
National Institute of 'Information and Communications Technology
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Akahane Kouichi
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Yamamoto Naokatsu
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Ueta Akio
National Institute of Information and Communications Technology (NICT), Basic and Advanced Research Department, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Ueta Akio
National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Yamamoto Naokatsu
National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Gozu Sin-ichioro
National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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