Low temperature formation of .BETA.-FeSi2 polycrystalline microstructure by pulsed laser deposition and thermal annealing

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概要

• 論文の詳細を見る

• β-FeSi2 polycrystalline microstructure was successfully formed at exceptionally low temperature in the form of droplet with room temperature pulsed laser deposition and post-annealing below 350°C employed. Evidence of the β-phase formation was obtained through microscopic Raman spectroscopy and TEM analysis. The low temperature nature may originate from formation of intermediate amorphous phase possibly provided by quick heat removal from Fe-Si melts generated by laser ablation. This low temperature scheme offers an alternative method of producing polycrystalline β-FeSi2 without higher temperature processes, which could be beneficially compatible with the standard Si device fabrication processes.

• The Institute of Electronics, Information and Communication Engineersの論文

著者

• Nakamura Shingo

  Department Of Applied Physics Waseda University

• Kishi Masato

  Department Of Applied Physics University Of Tokyo

• Sugawara Hiroharu

  Department Of Applied Chemistry University Of Tokyo

• Tsuchiya Masahiro

  Department of Aging and Geriatric Dentistry, Graduate School of Dentistry, Tohoku University

• Kumura Yui

  Department of Electronic Systems Engineering, Tokyo Metropolitan Institute of Technology

• Sugawara Hiroharu

  Department of Electronic Systems Engineering, Tokyo Metropolitan Institute of Technology

• Kishi Masato

  Department of Electronic Engineering, School of Engineering, The University of Tokyo

• Oouchi Masayuki

  Department of Electronic Systems Engineering, Tokyo Metropolitan Institute of Technology

• Shishido Takenobu

  Department of Electronic Systems Engineering, Tokyo Metropolitan Institute of Technology

• Igarashi Takatoshi

  Department of Electronic Engineering, School of Engineering, The University of Tokyo

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