Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells
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概要
- 論文の詳細を見る
We have investigated spin polarization-related localized exciton photoluminescence (PL) dynamics in GaInNAs quantum wells by time-resolved PL spectroscopy. The emission energy dependence of PL polarization decay time as well as polarization-independent PL decay time suggests that the acoustic phonon scattering in the process of localized exciton transfer from the high-energy localized states to the low-energy ones dominates the PL polarization relaxation. By increasing the excitation power from 1 to 10 mW, the PL polarization decay time is changed from 0.17 to more than 1 ns, which indicates the significant effect of the trapping of localized electrons by nonradiative recombination centers. These experimental findings indicate that the spin-related PL polarization in diluted nitride semiconductors can be manipulated through carrier scattering and recombination process.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-10-25
著者
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Tackeuchi Atsushi
Department Of Applied Physics Waseda University
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Tackeuchi Atsushi
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Lu Shulong
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Nosho Hidetaka
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Bian Lifeng
Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215125, P. R. China
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Dong Jianrong
Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215125, P. R. China
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Niu Zhichuan
SKLSM, Institute of Semiconductors, CAS, Beijing 100083, P. R. China
関連論文
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- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
- Electron Spin Relaxation in GaAs/AlGaAs Quantum Wires Analyzed by Transient Photoluminescence
- Electron Spin Relaxation Dynamics in InGaAs/InP Multiple-Quantum Wells
- Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates
- Spin Relaxation in InAs Columnar Quantum Dots
- Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells
- Transition from Excitonic Tunneling to Free Carrier Tunneling in GaAs/AlGaAs Double Quantum Wells
- Picosecond Carrier Spin Relaxation in In
- Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots
- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
- Picosecond Carrier Spin Relaxation in In₀.₈Ga₀.₂As/AlAs/AlAs₀.₅₆Sb₀.₄₄ Coupled Double Quantum Wells (Special Issue : Solid State Devices and Materials)