Transition from Excitonic Tunneling to Free Carrier Tunneling in GaAs/AlGaAs Double Quantum Wells

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概要

• 論文の詳細を見る

• Nonresonant carrier tunneling has been studied as a function of temperature in GaAs/AlGaAs double quantum wells (DQWs). Time-resolved pump and probe reflectance measurements allow the direct observation of tunneling at any temperature between 15 K and room temperature. We found that for two DQWs with different barrier thicknesses, the tunneling time abruptly decreases above a critical temperature while it remains almost constant below the critical temperature. This critical temperature is shown to correspond to the exciton binding energy. Rate equation analysis explains this behavior as the thermalization of excitons into free electrons that have a faster tunneling time than excitons.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-06-15

著者

• MUTO Shunichi

  Department of Applied Physics, Hokkaido University

• Tackeuchi Atsushi

  Department Of Applied Physics Waseda University

• Fujita Taisuke

  Department Of Global Studies Sophia University

• Tackeuchi Atsushi

  Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan

• Lu Shulong

  Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan

• Lu Shulong

  Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan

• Muto Shunichi

  Department of Applied Physics, Hokkaido University, Sapporo 060-8628, Japan

• Ushiyama Takafumi

  Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan

• Kusunoki Koji

  Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan

• Fujita Taisuke

  Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan

• Fujita Taisuke

  Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan

• Muto Shunichi

  Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan

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