Photon Antibunching Observed from an InAlAs Single Quantum Dot
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概要
- 論文の詳細を見る
Single-photon emitters and detectors are key devices to realize secure communications with single-photon-based quantum cryptography and single-photon-based quantum computing. InAlAs quantum dots (QDs) cover the wavelength range with high quantum efficiencies of Si-based single-photon detectors. Clear photon antibunching was observed from an InAlAs single QD under weak excitations. To realize single-photon emitters on demand, complete population of the QD energy states before the photon emission events is necessary, but the measured antibunching properties were dependent substantially on the photo-excitation powers. The physical origin of this problem is discussed. The criterion to distinguish the real deviation from the photon antibunching condition and the artifact of the measurements is clarified. The capability of single-photon emissions on demand will be demonstrated with photon antibunching under pulsed operations.
- 2005-06-10
著者
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HIROSE Shinichi
Fujitsu Laboratories Ltd.
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MUTO Shunichi
Department of Applied Physics, Hokkaido University
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KIMURA Satoshi
RIES, Hokkaido University
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KUMANO Hidekazu
RIES, Hokkaido University
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ENDO Michiaki
RIES, Hokkaido University
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SASAKURA Hirotaka
CREST JST
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ADACHI Satoru
Department of Applied Physics, Hokkaido University
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SONG Hai
CREST JST
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USUKI Tatsuya
CREST JST
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Yokoi Tomonori
Department Of Applied Physics Hokkaido University
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Suemune Ikuo
RIES, Hokkaido University
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Suemune Ikuo
RIES, Hokkaido University, Sapporo 001-0021, Japan
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Muto Shunichi
Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan
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Yokoi Tomonori
Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan
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Song Hai
CREST JST, Kawaguchi, Saitama 332-0012, Japan
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Endo Michiaki
RIES, Hokkaido University, Sapporo 001-0021, Japan
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Adachi Satoru
Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan
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