Spin Depolarization via Tunneling Effects in Asymmetric Double Quantum Dot Structure
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概要
- 論文の詳細を見る
Time-resolved photoluminescence experiments have been performed to investigate exciton spin relaxation processes at low temperatures in InAlAs-InGaAs asymmetric double quantum dots embedded in AlGaAs layers. By decreasing the thickness of the AlGaAs barrier between the dots, the spin relaxation times decreased from 3 ns to 1 ns. The observed spin relaxation as a function of barrier thickness was reasonably described by two components: one was a constant and the other was exponentially depended on barrier thickness. The origin of the latter component is discussed in connection with spin-flip tunneling.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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MUTO Shunichi
Department of Applied Physics, Hokkaido University
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Sasakura Hirotaka
Department Of Applied Physics Faculty Of Engineering Hokkaido University
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ADACHI Satoru
Department of Applied Physics, Hokkaido University
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USUKI Tatsuya
CREST JST
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SONG Hai
Fujitsu LIMITED
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MIYAZAWA Toshiyuki
CREST, Japan Science and Technology Corporation
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Miyazawa Toshiyuki
CREST, Japan Science and Technology Corporation, N13 W8, Kitaku, Sapporo 060-8628, Japan
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Adachi Satoru
Department of Applied Physics, Hokkaido University, N13 W8, Kitaku, Sapporo 060-8628, Japan
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Usuki Tatsuya
CREST, Japan Science and Technology Corporation, N13 W8, Kitaku, Sapporo 060-8628, Japan
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Muto Shunichi
Department of Applied Physics, Hokkaido University, N13 W8, Kitaku, Sapporo 060-8628, Japan
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Sasakura Hirotaka
Department of Applied Physics, Hokkaido University, N13 W8, Kitaku, Sapporo 060-8628, Japan
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Muto Shunichi
Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan
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Adachi Satoru
Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan
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