Mechanism of Quantum Dot Formation by Postgrowth Annealing of Wetting Layer

概要

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Low density InAs/GaAs quantum dots (QDs) can be formed by postgrowth annealing of an InAs wetting layer thinner than the critical thickness corresponding to conventional transition from two- to three- dimensional (2D–3D) growth modes. Using real-time reflection high-energy-electron diffraction, the time evolution of total QD volume is analyzed. Based on a mean-field theory [Phys. Rev. Lett. 79 (1997) 897], the initially increasing and finally saturating QD volume is simply and well explained by QD nucleation from precursors. It is suggested that precursors start to grow at an exponential rate well before the 2D–3D growth mode transition, and are responsible for the usually observed significant mass transport from a wetting layer to QDs in conventional QD growth.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-04-30