Yokoyama Naoki | Nanotechnology Research Center Fujitsu Laboratories Ltd.
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概要
関連著者
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Yokoyama Naoki
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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AWANO Yuji
Fujitsu Ltd.
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Awano Yuji
Fujitsu Laboratories Ltd.
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OHFUTI Mari
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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OHFUTI Mari
Fujitsu Limited
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YOKOYAMA Naoki
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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Ohfuti Mari
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Sato Shintaro
Mirai-selete
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NIHEI Mizuhisa
Fujitsu Limited
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KONDO Daiyu
Fujitsu Limited
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KAWABATA Akio
Fujitsu Limited
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SATO Shintaro
Fujitsu Limited
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Kondo Daiyu
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Kondo Daiyu
Department Of Physics Graduate School Of Science Tohoku University
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SASAKURA Hirotaka
CREST JST
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Sato Shintaro
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Kondo Daiyu
Fujitsu Laboratories Ltd.
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Kawabata Akio
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Nihei Mizuhisa
MIRAI-Selete
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Yokoyama Naoki
Nanotechnology Research Center, Fujitsu Lab. Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Song Haizhi
Nanotechnology Research Center, Fujitsu Lab. Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Usuki Tatsuya
Nanotechnology Research Center, Fujitsu Lab. Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Nakata Yoshiaki
Nanotechnology Research Center, Fujitsu Lab. Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Muto Shunichi
CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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Sasakura Hirotaka
CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
著作論文
- Carbon nanotube technologies for future ULSI via interconnects
- First-Principles Study of Electronic Properties in Si Lattice Matched SiGeC Alloy with a Low C Concentration
- Mechanism of Quantum Dot Formation by Postgrowth Annealing of Wetting Layer