Electrical Properties of Gallium Oxide Grown by Photoelectrochemical Oxidation of GaN Epilayers : Semiconductors
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概要
- 論文の詳細を見る
GaN-based metal-oxide-semiconductor (MOS) capacitors were fabricated by using Ga oxide. The oxide was formed by photo-electrochemical (PEC) oxidation of GaN and was dominated by the β-Ga_2O_3 phase. The electrical properties were characterized by capacitance-voltage and current-voltage measurements. The MOS structures with PEC-formed thin oxide exhibit a fixed oxide charge density of 4.8 x 10^<12> cm^<-2> and a density of interface states in the lower 10^<12> eV^<-1> .cm^<-2> regime, and show stability at temperatures below 700℃. The leakage current in the MOS capacitors is dominated by surface injection of carriers from the gate electrode.
- 社団法人応用物理学会の論文
- 2002-12-15
著者
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KANG Tae
Quantum-Functional Semiconductor Research Center, Dongguk University
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Kang Tae
Quantum-functional Semiconductor Research Center Dongguk University
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Kang Tae
Quantum Functional Semiconductor Research Center Dongguk University
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FU Dejun
Quantum-Functional Semiconductor Research Center, Dongguk University
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Fu Dejun
Quantum-functional Semiconductor Research Center Dongguk University
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FU Dejun
Quantum Functional Semiconductor Research Center, Dongguk University
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