Formation of Hexagonal GaN Pyramids by Photo Assisted Electroless Chemical Etching
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概要
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Hexagonal GaN pyramids were formed by the photo enhanced chemical etching of GaN epilayers grown on sapphire by molecular-beam epitaxy. Defective areas of the epilayers were selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination, producing submicron-size pyramids nonuniformly distributed on the substrate. The cathodoluminescence of the pyramids was redshifted compared with that of the sample before etching. Atomic force microscopy suggested the facets of the pyramids to be (10$\bar{1}$2) oriented. High-resolution X-ray diffraction showed that the width of the (105) plane of the etched sample is smaller than that of the unetched sample. A larger quantity of K2S2O8 added to the KOH solution led to a high etching rate and the etched sample exhibited a strong cathodoluminescence.
- 2005-02-10
著者
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Kang Tae
Quantum Functional Semiconductor Research Center Dongguk University
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Panin Gennady
Quantum Functional Semiconductor Research Center Dongguk University
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FU Dejun
Quantum Functional Semiconductor Research Center, Dongguk University
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Kang Tae
Quantum-Functional Semiconductor Research Center, Dongguk University, 100-715 Seoul, Korea
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Park Young
Quantum-Functional Semiconductor Research Center, Dongguk University, 100-715 Seoul, Korea
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Panin Gennady
Quantum-Functional Semiconductor Research Center, Dongguk University, 100-715 Seoul, Korea
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