Defect Reduction in AlxGa1-xN Films Grown by Metal Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
The grain size of AlxGa1-xN films grown on c-plane sapphire substrates was been measured using the X-ray diffraction (XRD) technique. The grain size increases with increasing Al content. It is evident that films with large grain sizes have less defect scattering, and hence, conductivity increases with the grain size. Apparently, the addition of Al to the epilayer increases conductivity.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-15
著者
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Kang Tae
Quantum Functional Semiconductor Research Center Dongguk University
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Kim Hyeon
Department Of Industrial Toxicology Industrial Health Researchinstitute Korea Industrial Safety Corp
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Lin Jing
Department Of Marine Earth And Atmospheric Sciences North Carolina State University
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Lee Jeoung
Department Of Physics And Research Institute Of Natural Science Gyeongsang National University
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Jiang Hong
Department Of Cardiology Renmin Hospital Of Wuhan University
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Park Young
Department Of Biology Kyung Hee University
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Kim Kun
Department Of Chemistry Seoul Women's University
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Lin Jing
Department of Physics, Kansas State University, Manhattan, Kansas 66506, U.S.A.
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Lee Jeoung
Department of Physics and Research Institute of Natural Science, Gyeongsang National University, Jinju 660-701, Korea
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Park Young
Department of Physics and Research Institute of Natural Science, Gyeongsang National University, Jinju 660-701, Korea
-
Kim Kun
Department of Physics and Research Institute of Natural Science, Gyeongsang National University, Jinju 660-701, Korea
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Kim Hyeon
Department of Physics and Research Institute of Natural Science, Gyeongsang National University, Jinju 660-701, Korea
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