Hydrogenation and Annealing Effects on Deep Levels in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-05-01
著者
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Kim Tae
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Kim T
Kwangwoon Univ. Seoul Kor
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Kang Tae
Quantum-functional Semiconductor Research Center Dongguk University
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Kim T
Hanyang Univ. Seoul Kor
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Kang T
Dongguk Univ. Seoul Kor
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Kang Tae
Quantum Functional Semiconductor Research Center Dongguk University
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Kang Tae
Quantum-functional Semiconductor Research Center And Department Of Physics
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JUNG Woon
Quantum-Functional Semiconductor Research Center, Dongguk University
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Jung Woon
Quantum-functional Semiconductor Research Center Dongguk University
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Kim Tae
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Kim Tae
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic Korea
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