A Low Power Highly linear Cascoded Multiple Gated Transistor CMOS RF Amplifier with 10dB IP3 Improvement
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概要
- 論文の詳細を見る
A low power highly linear CMOS RF amplifier circuit composed of Multiple Gated common-source FET TRansistor (MGTR) in cascode configuration is reported. In MGTR amplifier, linearity is improved by using transconductance linearization which can be achieved with canceling the negative peak value of gm'' of the main transistor with the positive one in auxiliary transistor having different size and gate drive combined in parallel. This enhancement, however, is limited by the distortion originated from the combined influence of gm' and harmonic feedback, which can greatly be reduced by cascoding MGTR output. IP3 improvement as large as 10dB has been obtained from an experimental RF amplifier designed at 900 MHz and fabricated using 0.35μm BiCMOS technology using only CMOS at similar power consumption and gain as those obtainable from conventional cascode single gate transistor amplifier.
- 社団法人電子情報通信学会の論文
- 2002-06-24
著者
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Kim Tae
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Kim Tae
Department Of Eecs Korea Advanced Institute Of Science And Technology
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Lee Kwyro
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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Lee K
Korea Advanced Inst. Sci. And Technol. Kor
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Lee Kwyro
Department Of Eecs Korea Advanced Institute Of Science And Technology
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Kim Tae
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Kim Bonkee
RF Products, System LSI business, Semiconductor, Samsung Electronics
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Nam Ilku
Department of EECS, Korea Advanced Institute of Science and Technology
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Ko Beomkyu
Integrant Technologies
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Kim Bonkee
Rf Products. System Lsi Business Semiconductor Samsung Electronics
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Nam Ilku
Department Of Eecs Korea Advanced Institute Of Science And Technology
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Nam Ilku
RF Products, System LSI business, Semiconductor, Samsung Electronics
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Kim Tae
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic Korea
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Lee Kwyro
Department of EE, Korea Advanced Institute of Science and Technology (KAIST)
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