Effects of Hydrogenation and Annealing on the Deep Levels in GaN Epilayers Grown on Sapphire Substrates
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概要
- 論文の詳細を見る
The photoionization cross section and the concentration of state of the deep levels in as-grown, hydrogenated, and hydrogenated and annealed GaN epilayers were determined from the dependence of the rise and the decay times of the extrinsic photoconductivity(PC)response on the post treatment condition. The values of the concentrations of the deep levels in the GaN epilayer decreased by the hydrogenation and the annealing treatment. While the thermal activation energy of the deep level, which were determined from the temperature dependence of the relaxation times of the extrinsic PC response, for the hydrogenated GaN/sapphire heterostructure decreased in comparison with that for the as-grown sample, that for the hydrogenated and annealed sample increased in comparison with that for the hydrogenated sample.
- 社団法人応用物理学会の論文
- 2000-01-15
著者
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Kim Tae
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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YULDASHEV Shavkat
Quantum-Functional Semiconductor Research Center, Dongguk University
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KANG Tae
Department of Physics and Quantum-Functional Semiconductor Research Center, Dongguk University
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U.yuldashev Shavkat
Quantum-functional Semiconductor Research Center Dongguk University
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Yuldashev Shavkat
Heat Physics Department Academy Of Sciences
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Kim D
Dongguk Univ. Seoul Kor
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Kang Tae
Department Of Physics Kwangwoon University
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Kim Tae
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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KIM Duek
Department of Physics, Dongguk University
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Kang Tae
Department Of Mathematics College Of Natural Science Ulsan University
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Kang Tae
Department Of Clinical Pharmacology Team National Institute Of Toxicological Research Korea Food And Drug Administration
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Kim Tae
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic Korea
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