Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-11-01

著者

• Kim Tae

  Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology

• Kim T

  Kwangwoon Univ. Seoul Kor

• Kang Tae

  Quantum-functional Semiconductor Research Center Dongguk University

• Kim T

  Hanyang Univ. Seoul Kor

• Kang T

  Dongguk Univ. Seoul Kor

• Kang Tae

  Quantum Functional Semiconductor Research Center Dongguk University

• Kang Tae

  Quantum-functional Semiconductor Research Center And Department Of Physics

• JUNG Woon

  Quantum-Functional Semiconductor Research Center, Dongguk University

• CHUNG Kwan

  Department of Electronic Engineering, Kyunghee University

• Jung Woon

  Quantum-functional Semiconductor Research Center Dongguk University

• Chung K

  Kyung‐hee Univ. Kyunggi Kor

• Chung Kwan

  Department Of Electronic Engineering Kyung-hee University

• Kim Tae

  Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University

• Kim Tae

  Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic Korea

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