Crystallization of 3C-SiC (111) Thin Films Grown on Si (111) Substrates by Post Thermal Annealing : Semiconductors

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概要

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• Thermal treatment of SiC thin films grown on p-Si (111) substrates by plasma enhanced chemical vapor deposition was performed to crystallize as-grown amorphous SiC layers. Nomarski optical microscopy and X-ray diffraction measurements showed that the as-grown SiC thin films on p-Si (111) substrates were amorphous and that the films annealed at 1100℃ were crystallized with 3C-SiC (111) orientation. The results of X-ray photoelectron spectroscopy measurements showed that in the crystallized films, good stoichiometry was realized for the components of the SiC epilayer. These results indicate that SiC thin films grown on p-Si (111) substrates were crystallized by thermal treatment.

• 社団法人応用物理学会の論文
• 2001-11-15

著者

• Kang Tae

  Quantum Functional Semiconductor Research Center Dongguk University

• Park Mun

  Electronics And Telecommunications Research Institute

• Kim Tae

  Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University

• Hong Sung

  Electronics And Telecommunications Research Institute

• LEE Hae

  Quantum-functional Semiconductor Research Center and Department of Physics, Dongguk University

• Lee Hae

  Quantum-functional Semiconductor Research Center And Department Of Physics Dongguk University

• Kim Tae

  Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic Korea

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