Magnetoresistance of Ga1-xMnxAs Epitaxial Layers Doped by Be
スポンサーリンク
概要
- 論文の詳細を見る
Magnetoresistance (MR) measurements were performed on Ga1-xMnxAs ($x=0.03$) additionally doped with Be. At low temperatures and in low magnetic fields, a positive MR signal was observed for measurements in the transverse ($\mathbf{B}\perp\mathbf{I}$) geometry. However, at high temperatures, the MR becomes negative for all fields and all field orientations. The value of the negative MR has a maximum near the Curie temperature, and its magnitude depends strongly on the concentration of free holes. The observed MR behavior can be described by the magnetoimpurity scattering model in both the paramagnetic and the ferromagnetic temperature regions. Quantitative analysis of the Ga1-xMnxAs MR data yields the value of the p–d exchange energy as $|N_{0}\beta|\approx 1.6$ eV.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-10-15
著者
-
Kang Tae
Quantum Functional Semiconductor Research Center Dongguk University
-
Im Hyunsik
Quantum Functional Semiconductor Research Center Dongguk University
-
Yuldashev Shavkat
Quantum Functional Semiconductor Research Center Dongguk University
-
Park Chang
Quantum Functional Semiconductor Research Center Dongguk University
-
Sasaki Yuji
Department Of Analytical Science Institute For Materials Resarch Tohoku Univetsity
-
YALISHEV Vadim
Quantum Functional Semiconductor Research Center, Dongguk University
-
Furdyna Jacek
Department Of Physics University Of Notre Dame
-
Lee Sanghoon
Department Of Biomedical Engineering College Of Medicine Dankook University
-
Liu Xin
Department Of Chemistry Dalian University Of Technology
-
Furdyna Jacek
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
-
Im Hyunsik
Quantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, Korea
-
Park Chang
Quantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, Korea
-
Kang Tae
Quantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, Korea
-
Lee Sanghoon
Department of Physics, Korea University, Seoul 136-701, Korea
-
Yalishev Vadim
Quantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, Korea
関連論文
- Specific Heat Study of GaMnAs
- Hydrogenation and Annealing Effects on Deep Levels in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates : Semiconductors
- A Study of Photoelectrochemical Oxidation of GaN Epilayers by Extrinsic Photoconductivity : Semiconductors
- Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere
- Annealing Effect on Passivated Deep Levels in GaN Epilayers
- Magnetic Characteristic Of Mn^+ Ion Implanted GaN Epilayer : Semiconductors
- Enhancement of the Ferromagnetic Transition Temperature in Self-Assembled (Ga_Mn_x)As Quantum Wires
- Rapid DNA Hybridization Analysis Using a PDMS Microfluidic Sensor and a Molecular Beacon
- Effect of Interlayer Exchange Coupling on the Curie Temperature in Ga_Mn_xAs Trilayer Structures
- Clinical Manifestations of Hand Eczema Compared by Etiologic Classification and Irritation Reactivity to SLS
- ALPHA-ADRENOLYTIC PROPERTIES OF APOGALANTHAMINE AND AZAPETINE ANALOGS
- Magnetoresistance of Ga_Mn_x As Epitaxial Layers Doped by Be
- Electrical and Optical Properties of ZnO Films Grown on GaAs Substrates
- Altered expression of vasoactive intestinal peptide receptors in T lymphocytes and aberrant T_h1 immunity in multiple sclerosis
- Magnetic Anisotropy of GaMnAs Film and Its Application in Multi-valued Memory Devices
- Kelvin Probe Force Microscopy of Defects in ZnO Nanocrystals Associated with Emission at 3.31 eV
- FAST OSCILLATIONS OF THE ELECTRO-OCULOGRAM IN A SERIES OF NORMAL SUBJECTS
- A novel diaphragm-to-housing junction adhesive method : alumina ball milling
- Thermal Conductivity of ZnO Nanowires Embedded in Poly(methyl methacrylate) Matrix
- A Korean Case of Keratosis Follicularis Squamosa (Dohi) Successfully Treated with Roxithromycin
- High performance liquid chromatography assay with ultraviolet detection for moxifloxacin : Validation and application to a pharmacokinetic study in Chinese volunteers
- Postoperative Alopecia in Five Patients after Treatment of Aneurysm Rupture with a Guglielmi Detachable Coil : Pressure Alopecia, Radiation Induced, or Both?
- Electrical Properties of Gallium Oxide Grown by Photoelectrochemical Oxidation of GaN Epilayers : Semiconductors
- A Solvothermal Synthesis and the Structure of (NH_4)_2AG_6Sn_3S_
- Crystallization of 3C-SiC (111) Thin Films Grown on Si (111) Substrates by Post Thermal Annealing : Semiconductors
- Correlation between Resistance Switching States and Photoluminescence Emission in ZnO Films
- Solvent Extraction of Eu, Th, U, Np and Am with N, N'-Dimethyl-N, N'-dihexyl-3-oxapentanediamide and Its Analogous Compounds
- Formation of Hexagonal GaN Pyramids by Photo Assisted Electroless Chemical Etching
- The effect of proopiomelanocortin-derived peptides on the immune system of human hair follicles
- Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates
- The Form Change of Metal Thin Film as Measured by the Retracted X-Ray Fluorescence (RXF) Method
- Excitation Intensity Dependent Studies of Photoluminescence from ZnO Nanocrystals Deposited on Different Substrates
- Green Photoluminescence Suppression in ZnO Embedded in Porous Opal
- InfluenceRank: Trust-Based Influencers Identification Using Social Network Analysis in Q&A Sites
- Implementation of Multimode-Multilevel Block Truncation Coding for LCD Overdrive
- Determination of Depth Profile of CuO^+ and Cu^+ in Superconductors by a Wet-Chemical Method Using Flow-Coulometry
- G31P, an Antagonist against CXC Chemokine Receptors 1 and 2, Inhibits Growth of Human Prostate Cancer Cells in Nude Mice
- Defect Reduction in AlxGa1-xN Films Grown by Metal Organic Chemical Vapor Deposition
- Effect of Interlayer Exchange Coupling on the Curie Temperature in Ga1-xMnxAs Trilayer Structures
- Photo-enhanced Magnetoresistance Effect in GaAs with Nanoscale Magnetic Clusters
- Magnetoresistance of Ga1-xMnxAs Epitaxial Layers Doped by Be
- Formation and Characterization of (Zn1-xMnx)O Diluted Magnetic Semiconductors Grown on (0001) Al2O3 Substrates
- White Light Emission from ZnO/Zn0.9Mg0.1O Heterostructures Grown on Si Substrates
- Nonpolar Resistance Switching in Anodic Oxide Alumina Films
- 60 GHz Millimeter-Wave CMOS Integrated On-Chip Open Loop Resonator Bandpass Filters on Patterned Ground Shields
- Study of Insertion Characteristics of Si Neural Probe with Sharpened Tip for Minimally Invasive Insertion to Brain (Special Issue : Solid State Devices and Materials)
- Device-Aware Visual Quality Adaptation for Wireless N-Screen Multicast Systems
- Thermo- and Photo-annealing of ZnO Nanocrystals
- Modulation of Excitonic Emission from ZnO Nanocrystals by Visible Light Illumination
- Miscibility and morphology of binary crystalline blends of poly(L-lactide) and poly(butylene adipate)