Correlation between Resistance Switching States and Photoluminescence Emission in ZnO Films
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概要
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We investigated the resistance switching characteristics of the Ag/ZnO/Pt/Si structure and their influence on the photoluminescence (PL) properties of the ZnO layer. Two resistance states were obtained by applying voltages of the same polarity. The resistance switching in the Ag/ZnO/Pt/Si device was ascribed to the formation/disruption of conducting filaments in the ZnO layer during switching processes. PL measurements of the ZnO film showed a significant increase in the visible emission from samples switched to the low resistance state (LRS). This PL signal was attributed to emission from defects generated in the ZnO layer during transition from the high resistance state (HRS) to the more conductive LRS.
- 2011-07-25
著者
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Yuldashev Shavkat
Quantum Functional Semiconductor Research Center Dongguk University
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Kim Yeon
Division Of Applied Plant Sciece And Agricultural Plant Stress Research Center College Of Agricultur
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Park Bae
Division Of Quantum Phases And Devices Department Of Physics Konkuk University
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YALISHEV Vadim
Division of Quantum Phases and Devices, School of Physics, Konkuk University
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