White Light Emission from ZnO/Zn0.9Mg0.1O Heterostructures Grown on Si Substrates
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概要
- 論文の詳細を見る
Light-emitting n-Zn0.9Mg0.1O/ZnO/p-Zn0.9Mg0.1O heterojunction structures were grown on single-crystal p-type Si(100) substrates using a simple process of ultrasonic spray pyrolysis. Aqueous solutions of zinc acetate, magnesium acetate, and ammonium acetate were used as the sources of Zn, Mg, and N, respectively. p-Type conductivity in the nitrogen-doped ZnO and Zn0.9Mg0.1O films has been observed. A distinct visible electroluminescence was observed at room temperature from the heterojunction structures under forward bias conditions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-01-25
著者
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Kang Tae
Quantum Functional Semiconductor Research Center Dongguk University
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Yuldashev Shavkat
Quantum Functional Semiconductor Research Center Dongguk University
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Kang Tae
Quantum-Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-gu, Seoul 100-715, Korea
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Yalishev Vadim
Department of Physics, Konkuk University, 1 Hwayang-dong, Kwangjin-gu, Seoul 143-701, Korea
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Nusretov Rafael
Heat Physics Department, Uzbekistan Academy of Sciences, 28 Katartal, Tashkent 700135, Uzbekistan
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Khvan Irina
Heat Physics Department, Uzbekistan Academy of Sciences, 28 Katartal, Tashkent 700135, Uzbekistan
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