Magnetic Anisotropy of GaMnAs Film and Its Application in Multi-valued Memory Devices
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概要
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The magnetic anisotropy of GaMnAs ferromagnetic semiconductor film was investigated by magneto-transport measurements. Values of cubic and uniaxial anisotropies were obtained by analyzing the angular dependences of Hall effects based on magnetic free energy. The presence of strong cubic anisotropy gave four magnetic easy axes in the film's plane, resulting in two-step switching behavior in field scans of the planar Hall effect. Asymmetric loops containing four resistance plateaus were observed in minor scans of the planar Hall effect owing to the formation of stable multi-domain structures during magnetization reversal. Four-valued memory function based on the four observed Hall resistance states was demonstrated by using appropriate sequences of magnetic field pulses.
- 2011-04-25
著者
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LIU Xinyu
Department of Material Chemistry, Graduate School of Engineering, Kyoto University
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Lee Sanghoon
Department Of Biomedical Engineering College Of Medicine Dankook University
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Khym Sungwon
Department of Physics, Korea University, Seoul 136-701, Korea
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K. Furdyna
Department of Physics, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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Yoo Taehee
Department of Physics, Korea University, Seoul 136-701, Korea
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Lee Hakjoon
Department of Physics, Korea University, Seoul 136-701, Korea
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