Dependence of the Surface, the Structural, and the Optical Properties on the Thickness of the AIN Buffer Layer for GaN Epilayers Grown on Sapphire Substrates : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-12-15
著者
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Kim Tae
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Kim T
Kwangwoon Univ. Seoul Kor
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Kim T
Hanyang Univ. Seoul Kor
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Jeon Hee
Quantum-functional Semiconductor Research Center And Department Of Physics
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Kang T
Dongguk Univ. Seoul Kor
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Kang Tae
Quantum-functional Semiconductor Research Center And Department Of Physics
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KANG Tae
Department of Physics and Quantum-Functional Semiconductor Research Center, Dongguk University
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JEON Hee
Department of Physics, Dongguk University
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Kim Tae
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Jeon Hee
Department Of Internal Medicine The Catholic University Of Korea
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Kang Tae
Department Of Mathematics College Of Natural Science Ulsan University
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Kang Tae
Department Of Clinical Pharmacology Team National Institute Of Toxicological Research Korea Food And Drug Administration
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Kim Tae
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic Korea
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